Exploring the structural and electronic properties of CeO2 thin films: role of thickness, temperature, and oxygen vacancies
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Tarih
2025
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
National Institute of Optoelectronics
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Systematic investigation of the temperature-dependent local arrangements in CeO<inf>2</inf> thin films and their direct impact on electronic properties is presented. Results revealed that thicker films promote oxygen vacancy formation, reducing Ce4+ to Ce3+ and modifying the local coordination. Furthermore, temperature-dependent EXAFS analysis uncovers a local structural rearrangement transition above 400 K, driven by thermal activation of oxygen vacancies. This rearrangement, occurring within a globally stable cubic framework, directly alters the hybridization between Ce 4f/5d and O 2p orbitals. Density Functional Theory (DFT) calculations corroborate the experimental findings, revealing an indirect bandgap of 1.60 eV as a result of orbital hybridization. © 2025, National Institute of Optoelectronics. All rights reserved.
Açıklama
Anahtar Kelimeler
Cerium dioxide (CeO2), Electronic structure, EXAFS, Thin films
Kaynak
Journal of Optoelectronics and Advanced Materials
WoS Q Değeri
Scopus Q Değeri
Q4
Cilt
27
Sayı
11-12
