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Öğe Influence of Ge concentration on magnetic properties of Co(1-x)Gex thin films(Springer Wien, 2024) Tokac, M.; Piskin, H.; Ozkal, B.; Aktas, K. Yildiz; Kocaman, B.; Arslan, L. colakerol; Rameev, B.Cobalt-rich Co(1-x) alloy thin films with various Ge concentrations (up to x=0.09) have been investigated by vibrating sample magnetometry and ferromagnetic resonance techniques to understand the influence of Ge doping on magnetostatic and magnetodynamic properties. Room-temperature magnetization curves have shown that the addition of Ge atoms can reduce the saturation magnetization in a fast manner. Utilizing a conventional ferromagnetic resonance setup, the out-of-plane angular dependencies of the resonance spectra have been measured and data have been analyzed using a computer program to simulate the magnetic behavior of the thin-film alloys. The experimental findings demonstrate that the magnetic properties of Co(1-x)Ge-x alloys can be precisely adjusted by varying the Ge content. Both the g-factor and the Gilbert-damping parameter show correlated changes, highlighting the tunability of these magnetic characteristics. This ability to modify saturation magnetization and damping parameters by altering the Ge concentration enables the optimization and customization of the alloy for specific applications in spintronic devices.Öğe The role of W seed and spacer layers on the magnetic properties of Co/Pt multilayers(Elsevier, 2025) Tokac, M.; Piskin, H.; Ekinci, G.; Ozkal, B.; Kazan, S.The selection of seed and spacer layers is critical in influencing the magnetic properties of thin films, where these layers impact the microstructure, interface quality, and overall magnetic behavior of the thin films. The magnetic properties of Co/Pt multilayers have been investigated where the choice of seed and spacer layers is crucial for tailoring their magnetic properties. These layers influence the interfacial structure, and electronic environment, all of which contribute to variations in the effective demagnetizing field, g-factor, saturation magnetization, and perpendicular surface anisotropy constants. Ferromagnetic resonance has been used to investigate the enhancement of the Gilbert damping parameter, where the damping parameter is higher for the Cu/Co/Pt multilayers across the entire Co thickness range. In contrast, the presence of W layers on both sides of the Co layer leads to a reduction in the damping parameter. The higher spin-mixing conductance in the Co/Pt structure is linked to stronger SOC and enhanced orbital hybridization at the Co/Pt interface. As a consequence of their effects on spin-orbit interactions, spin-pumping efficiency, and interfacial quality, our results emphasize the critical role that interface characteristics play in improving damping in Co/Pt systems.Öğe Two Magnon Scattering Contribution to the Ferromagnetic Resonance Linewidth of Pt(Ir)/CoFeTaB/Ir(Pt) Thin Films(Springer Wien, 2023) Tokac, M.; Kazan, S.; Ozkal, B.; Al-jawfi, N.; Rameev, B.; Nicholson, B.; Hindmarch, A. T.The magnetic properties of Pt/CoFeTaB/Ir and Ir/CoFeTaB/Pt trilayer thin films have been studied using angular- and temperature-dependent ferromagnetic resonance. This enables quantitative determination of the various contributions to the magnetic behavior, including separating, the effective Gilbert damping, inhomogeneous damping, and two-magnon-scattering contributions to the magnetic dissipation. As-deposited films show behavior consistent with significant incorporation of Ir into CoFeTaB only when the Ir layer is deposited first. Annealing of the structures at 300 circle C\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$300\,<^>{\circ } \hbox {C}$$\end{document} causes only minor structural and magnetic modification when Pt is deposited first, and more pronounced changes, attributed to thermally-driven out-diffusion of Ir from CoFeTaB, are found when Ir is deposited first. A holistic consideration of the magnetic resonance behavior can provide detailed information on the atomic-scale structure in magnetic thin-film devices.












